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 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF393/D
The RF Line
NPN Silicon Push-Pull RF Power Transistor
. . . designed primarily for wideband large-signal output and driver amplifier stages in the 30 to 500 MHz frequency range. * Specified 28 Volt, 500 MHz Characteristics -- Output Power = 100 W Typical Gain = 9.5 dB (Class AB); 8.5 dB (Class C) Efficiency = 55% (Typ) * Built-In Input Impedance Matching Networks for Broadband Operation * Push-Pull Configuration Reduces Even Numbered Harmonics * Gold Metallization System for High Reliability * 100% Tested for Load Mismatch * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
2 6 5, 8 7 3 1, 4
MRF393
100 W, 30 to 500 MHz CONTROLLED "Q" BROADBAND PUSH-PULL RF POWER TRANSISTOR NPN SILICON
CASE 744A-01, STYLE 1 The MRF393 is two transistors in a single package with separate base and collector leads and emitters common. This arrangement provides the designer with a space saving device capable of operation in a push-pull configuration.
PUSH-PULL TRANSISTORS
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Total Device Dissipation @ TC = 25C (1) Derate above 25C Storage Temperature Range Junction Temperature Symbol VCEO VCBO VEBO IC PD Tstg TJ Value 30 60 4.0 16 270 1.54 - 65 to +150 200 Unit Vdc Vdc Vdc Adc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.65 Unit C/W
NOTE: 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push-pull amplifier.
REV 7
(c)MOTOROLA RF DEVICE DATA Motorola, Inc. 1997
MRF393 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
Collector-Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) Emitter-Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)EBO ICBO 30 60 4.0 -- -- -- -- -- -- -- -- 5.0 Vdc Vdc Vdc mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) hFE 20 -- 100 --
DYNAMIC CHARACTERISTICS (1)
Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob 40 75 95 pF
FUNCTIONAL TESTS (2) -- See Figure 1
Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 100 W, f = 500 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 100 W, f = 500 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 100 W, f = 500 MHz, VSWR = 30:1, all phase angles) NOTES: 1. Each transistor chip measured separately. 2. Both transistor chips operating in push-pull amplifier. Gpe No Degradation in Output Power 7.5 50 8.5 55 -- -- dB %
C10 C9 C11
L5 C12 + 28 V
B1 C1 Z1 C3 C2 L2 C4 Z2
L1 Z3
L3 C7 Z5 C5 Z4 D.U.T. L4 C14 C13 Z6 C8 C6
B2
L6 C15 C16
C1, C2, C7, C8 -- 240 pF 100 mil Chip Cap C3 -- 15 pF 100 mil Chip Cap C4 -- 24 pF 100 mil Chip Cap C5 -- 33 pF 100 mil Chip Cap C6 -- 12 pF 100 mil Chip Cap C9, C13 -- 1000 pF 100 mil Chip Cap C10, C14 -- 680 pF Feedthru Cap C11, C15 -- 0.1 F Ceramic Disc Cap C12, C16 -- 50 F 50 V
L1, L2 -- 0.15 H Molded Choke with Ferrite Bead L3, L4 -- 2-1/2 Turns #20 AWG 0.200 ID L5, L6 -- 3-1/2 Turns #18 AWG 0.200 ID B1, B2 -- Balun 50 Semi Rigid Coax, 86 mil OD, 4 Long Z1, Z2 -- 850 mil Long x 125 mil W. Microstrip Z3, Z4 -- 200 mil Long x 125 mil W. Microstrip Z5, Z6 -- 800 mil Long x 125 mil W. Microstrip Board Material -- 0.0325 Teflon-Fiberglass, r = 2.56, Board Material -- 1 oz. Copper Clad both sides.
Figure 1. 500 MHz Test Fixture
MRF393 2
MOTOROLA RF DEVICE DATA
CLASS C
80 f = 100 MHz Pout , OUTPUT POWER (WATTS) 140 120 500 MHz 100 80 60 40 20 0 0 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) VCC = 28 V 16 18 20 225 MHz 400 MHz Pout , OUTPUT POWER (WATTS) 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) VCC = 13.5 V 16 18 20 500 MHz f = 100 MHz 225 MHz 400 MHz
Figure 2. Output Power versus Input Power
Figure 3. Output Power versus Input Power
CLASS C
120 Pin = 10 W Pout , OUTPUT POWER (WATTS) 100 Pout , OUTPUT POWER (WATTS) 8W 100 12 W 80 8W 60 120 Pin = 16 W
80
6W
60
40 f = 225 MHz 20 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 28
40 f = 500 MHz 20 12 16 20 24 VCC, SUPPLY VOLTAGE (VOLTS) 28
Figure 4. Output Power versus Supply Voltage
Figure 5. Output Power versus Supply Voltage
2 4
f = 100 MHz
2
ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device output operates at a 2 ZOL* = given output power, voltage and frequency. 4 6
140 Pout , OUTPUT POWER (WATTS) 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 Pin, INPUT POWER (WATTS) f = 500 MHz VCC = 28 V ICQ = 200 mA 16 18 20
225
400
4
500 Zin 500 400
8
ZOL*
225
6
VCC = 28 V, Pout = 100 W f MHz 100 225 400 500 Zin 0.85 + j0 0.58 + j2.6 3.00 + j5.9 4.80 + j3.0 ZOL* 7.8 - j5.6 5.0 - j3.2 3.2 - j0.6 2.9 + j1.2
Zo = 20 f = 100 MHz
8
NOTE: Zin & ZOL* are given from base-to-base NOTE: and collector-to-collector respectively.
Figure 6. Series Equivalent Input/Output Impedance
Figure 7. Class AB Output Power versus Input Power
MOTOROLA RF DEVICE DATA
MRF393 3
PACKAGE DIMENSIONS
U Q 0.76 (0.030)
M
4 PL NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. DIM A B C D E F G H J K L M N Q R U V MILLIMETERS MIN MAX 22.60 23.11 9.52 10.03 6.65 7.16 1.60 1.95 2.94 3.40 2.87 3.22 16.51 BSC 4.01 4.36 0.07 0.15 4.34 4.90 12.45 12.95 45_NOM 1.051 11.02 3.04 3.35 9.90 10.41 1.02 1.27 0.64 0.89 INCHES MIN MAX 0.890 0.910 0.375 0.395 0.262 0.282 0.063 0.077 0.116 0.134 0.113 0.127 0.650 BSC 0.158 0.172 0.003 0.006 0.171 0.193 0.490 0.510 45_NOM 0.414 0.434 0.120 0.132 0.390 0.410 0.040 0.050 0.025 0.035
M B
M 1 2 3 4
A
M
K
R
-B-
5
6
7
8
K
D
4 PL
F V L G -A- J N
4 PL 2 PL
H
C E -T-
SEATING PLANE
STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8.
EMITTER (COMMON) COLLECTOR COLLECTOR EMITTER (COMMON) EMITTER (COMMON) BASE BASE EMITTER (COMMON)
CASE 744A-01 ISSUE C
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers: USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
MRF393 4
*MRF393/D*
MRF393/D MOTOROLA RF DEVICE DATA


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